# Modeling of III-Nitride Devices for Device-Circuit Co-optimization under Cryogenic Environments

**Budget Signal Score:** 55/100

| Field | Value |
|---|---|
| Institution | Arizona State University |
| Location | SCOTTSDALE, AZ |
| Project | Modeling of III-Nitride Devices for Device-Circuit Co-optimization under Cryogenic Environments |
| Award amount | $596,140 |
| Obligated so far | $596,140 |
| Awarded | 2026-08-18 |
| Period | 2026-10-15 to 2029-09-30 |
| Program | EPMQD: Electronic, Photonic, M |
| Directorate / division | ENG / ECCS |
| Award ID | 2537290 |

## Why this score
- Award of $300K or more.
- Equipment- and compute-heavy field.

Source: U.S. National Science Foundation Awards API (https://www.nsf.gov/awardsearch/showAward?AWD_ID=2537290). Last refreshed: 2026-11-04T18:13:44.963Z.
Award data comes from the NSF Awards API and may be amended by NSF. Institution-level only; investigator contact details are not included. Informational only.